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ZXTDAM832
MPPSTM Miniature Package Power Solutions DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=15V; RSAT = 45m ; IC= 4.5A DESCRIPTION
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels 3mm x 2mm (Dual die) MLP PCB area and device placement savings Lower package height (nom. 0.9mm) Reduced component count
C2
C1
FEATURES
* Low Equivalent On Resistance * Extremely Low Saturation Voltage (100mV @1A) * hFE characterised up to 12A * IC= 4.5A Continuous Collector Current * 3mm x 2mm MLP
B2
B1
E2
E1
APPLICATIONS
* DC - DC Converters (FET Drivers) * Charging circuits * Power switches * Motor control
PINOUT
ORDERING INFORMATION
DEVICE ZXTDAM832TA ZXTDAM832TC REEL 7 13 TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 10000 3mm x 2mm MLP underside view
DEVICE MARKING
DAA ISSUE 1 - JUNE 2002 1
ZXTDAM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (a)(f) Continuous Collector Current (b)(f) Base Current Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IC IB PD PD PD PD PD PD T j :T stg LIMIT 40 15 7.5 15 4.5 5.0 1000 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 -55 to +150 UNIT V V V A A A mA W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g)
Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW.
SYMBOL R JA R JA R JA R JA R JA R JA
VALUE 83.3 51 125 111 73.5 41.7
UNIT C/W C/W C/W C/W C/W C/W
ISSUE 1 - JUNE 2002 2
ZXTDAM832
TYPICAL CHARACTERISTICS
3.5
Max Power Dissipation (W)
IC Collector Current (A)
10
VCE(SAT) Limited
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
1oz Cu Note (d)(f)
2oz Cu Note (e)(g)
Tamb=25C
1
DC 1s 100ms 10ms Note (a)(f) Single Pulse, Tamb=25C 1ms 100us
2oz Cu Note (a)(f) 1oz Cu Note (d)(g)
0.1
0.01 0.1
1
10
25
50
75
100
125
150
VCE Collector-Emitter Voltage (V)
Temperature (C)
Safe Operating Area
Derating Curve
225 200 175 150 125 100 75 50 25 0 0.1
Thermal Resistance (C/W)
Thermal Resistance (C/W)
80 60
Note (a)(f)
1oz copper Note (f) 1oz copper Note (g)
D=0.5
40 20
D=0.2 Single Pulse D=0.05 D=0.1
2oz copper Note (f) 2oz copper Note (g)
0 100 1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
Tamb=25C 2oz copper Note (g)
Thermal Resistance v Board Area
PD Dissipation (W)
3.0 Tj max=150C 2.5 2.0 1.5 1.0 0.5 0.0 0.1
Continuous 2oz copper Note (f)
1oz copper Note (f)
1oz copper Note (g)
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002 3
ZXTDAM832
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 8 70 165 240 200 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE 200 300 200 150 80 0.94 0.88 415 450 320 240 80 120 30 120 160 40 MHz pF ns ns 1.00 0.95 MIN. 40 15 7.5 TYP. 70 18 8.2 25 25 25 14 100 200 280 MAX. UNIT V V V nA nA nA mV mV mV mV mV V V CONDITIONS. I C =100 A I C =10mA* I E =100 A V CB =32V V EB =6V V CES =12V I C =0.1A, I B =10mA* I C =1A, I B =10mA* I C =3A, I B =50mA* I C =4.5A, I B =50mA* I C =4.5A, I B =100mA* I C =4.5A, I B =50mA* I C =4.5A, V CE =2V* I C =10mA, V CE =2V* I C =0.2A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* I C =12A, V CE =2V* I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz V CC =10V, I C =1A I B1 =I B2 =10mA
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off)
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ISSUE 1 - JUNE 2002 4
ZXTDAM832
TYPICAL CHARACTERISTICS
1
Tamb=25C
0.25
IC/IB=50
0.20
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=100
0.15 0.10 0.05
100C 25C -55C
10m
IC/IB=50 IC/IB=10
1m 1m
IC Collector Current (A)
10m
100m
1
10
0.00 1m
VCE(SAT) v IC
IC Collector Current (A)
10m
100m
1
10
VCE(SAT) v IC
630 1.2
VCE=2V 100C
540 450
1.0 0.8
IC/IB=50
Normalised Gain
1.0 0.8 0.6 0.4 0.2 0.0 1m 10m 100m 1 10
-55C 25C
Typical Gain (hFE)
360 270 180 90 0
VBE(SAT) (V)
-55C
0.6 0.4 1m
25C 100C
IC Collector Current (A)
hFE v IC
IC Collector Current (A)
10m
100m
1
10
VBE(SAT) v IC
1.0 0.8
VCE=2V
VBE(ON) (V)
-55C
0.6
25C
0.4 0.2 1m
100C
IC Collector Current (A)
10m
100m
1
10
VBE(ON) v IC
ISSUE 1 - JUNE 2002 5
ZXTDAM832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES DIM A A1 A2 A3 b b1 D D2 MIN. 0.80 0.00 0.65 0.15 0.24 0.17 MAX. 1.00 0.05 0.75 0.25 0.34 0.30 INCHES MIN. 0.031 0.00 0.0255 0.006 0.009 0.0066 MAX. 0.039 0.002 0.0295 0.0098 0.013 0.0118 DIM e E E2 E4 L L2 r 0 MILLIMETRES MIN. MAX. INCHES MIN. MAX.
0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.075 BSC 12
0.0256 BSC 0.0787 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005
3.00 BSC 0.82 1.02
0.118 BSC 0.032 0.040
0.0029 BSC 0 12
(c) Zetex plc 2002
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www.zetex.com ISSUE 1 - JUNE 2002 6

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